ROHM HT8 2 Type N-Channel MOSFET, 15 A, 60 V Enhancement, 8-Pin HSMT-8 HT8KC6TB1
- RS-artikelnummer:
- 264-489
- Tillv. art.nr:
- HT8KC6TB1
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
90,50 kr
(exkl. moms)
113,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 100 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 9,05 kr | 90,50 kr |
| 100 - 240 | 8,602 kr | 86,02 kr |
| 250 - 490 | 7,974 kr | 79,74 kr |
| 500 - 990 | 7,336 kr | 73,36 kr |
| 1000 + | 7,056 kr | 70,56 kr |
*vägledande pris
- RS-artikelnummer:
- 264-489
- Tillv. art.nr:
- HT8KC6TB1
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | HT8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 14W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series HT8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 14W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM dual Nch plus Nch power MOSFET 60V 15A features low on-resistance, making it ideal for switching applications.
Low on-resistance
High Power small mold Package HSMT8
Pb-free plating and RoHS compliant
Halogen Free
relaterade länkar
- ROHM RQ3 Type N-Channel MOSFET 8-Pin HSMT-8 RQ3L060BGTB1
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BKFRATCB
- ROHM RQ3 Type P-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BJFRATCB
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1
- ROHM HP8 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- ROHM RH6 1 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RH6L040BGTB1
- ROHM HT8MC5 Type P 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1
- ROHM RQ3L270 Type P-Channel Single MOSFETs 60 V Enhancement, 8-Pin HSMT-8AG RQ3L270BJFRATCB
