Nexperia PSM Type N-Channel MOSFET, 51 A, 30 V Enhancement, 5-Pin LFPAK PSMN7R5-30YLDX
- RS-artikelnummer:
- 219-511
- Tillv. art.nr:
- PSMN7R5-30YLDX
- Tillverkare / varumärke:
- Nexperia
Antal (1 rulle med 1500 enheter)*
6 088,50 kr
(exkl. moms)
7 611,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 1 500 enhet(er) är redo att levereras
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1500 + | 4,059 kr | 6 088,50 kr |
*vägledande pris
- RS-artikelnummer:
- 219-511
- Tillv. art.nr:
- PSMN7R5-30YLDX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Qualified to 175 °C
Superfast switching with soft recovery
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