Nexperia PSM Type N-Channel MOSFET, 120 A, 40 V Enhancement, 5-Pin LFPAK PSMN3R5-40YSBX
- RS-artikelnummer:
- 219-369
- Tillv. art.nr:
- PSMN3R5-40YSBX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
10,08 kr
(exkl. moms)
12,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 490 enhet(er) från den 26 december 2025
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 10,08 kr |
| 10 - 99 | 9,18 kr |
| 100 - 499 | 8,29 kr |
| 500 - 999 | 7,84 kr |
| 1000 + | 6,83 kr |
*vägledande pris
- RS-artikelnummer:
- 219-369
- Tillv. art.nr:
- PSMN3R5-40YSBX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. The package is qualified to 175 °C. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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