Nexperia PSM Type N-Channel MOSFET, 300 A, 40 V Enhancement, 5-Pin LFPAK PSMNR90-40YLHX
- RS-artikelnummer:
- 219-354
- Tillv. art.nr:
- PSMNR90-40YLHX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
43,23 kr
(exkl. moms)
54,04 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 1 500 enhet(er) är redo att levereras
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 43,23 kr |
| 10 - 99 | 38,98 kr |
| 100 - 499 | 35,73 kr |
| 500 - 999 | 33,15 kr |
| 1000 + | 29,79 kr |
*vägledande pris
- RS-artikelnummer:
- 219-354
- Tillv. art.nr:
- PSMNR90-40YLHX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.94mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.94mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. The package is qualified to 175 °C. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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