Nexperia PSM Type N-Channel MOSFET, 300 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLDX

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28 009,50 kr

(exkl. moms)

35 011,50 kr

(inkl. moms)

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  • 1 500 enhet(er) levereras från den 15 juli 2026
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1500 +18,673 kr28 009,50 kr

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RS-artikelnummer:
219-313
Tillv. art.nr:
PSMN1R0-30YLDX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

30V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

238W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

57.3nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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