Nexperia PSM Type N-Channel MOSFET, 60 A, 25 V Enhancement, 5-Pin LFPAK PSMN6R1-25MLDX
- RS-artikelnummer:
- 219-309
- Tillv. art.nr:
- PSMN6R1-25MLDX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
5,26 kr
(exkl. moms)
6,58 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 975 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 5,26 kr |
| 10 - 99 | 4,70 kr |
| 100 - 499 | 4,48 kr |
| 500 - 999 | 4,03 kr |
| 1000 + | 3,58 kr |
*vägledande pris
- RS-artikelnummer:
- 219-309
- Tillv. art.nr:
- PSMN6R1-25MLDX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Maximum Power Dissipation Pd | 42W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Maximum Power Dissipation Pd 42W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Superfast switching with soft recovery
Qualified to 175 °C
relaterade länkar
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN6R1-25MLDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN2R0-25MLDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN3R5-25MLDX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN6R1-30YLDX
- Nexperia PSM Type N-Channel MOSFET 60 V Enhancement, 5-Pin LFPAK PSMN7R5-60YLX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN8R5-40MLDX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN8R5-40MSDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN1R7-25YLDX