Nexperia PSM Type N-Channel MOSFET, 60 A, 25 V Enhancement, 5-Pin LFPAK PSMN6R1-25MLDX

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7 215,00 kr

(exkl. moms)

9 015,00 kr

(inkl. moms)

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  • Dessutom levereras 1 500 enhet(er) från den 26 december 2025
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1500 +4,81 kr7 215,00 kr

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RS-artikelnummer:
219-308
Tillv. art.nr:
PSMN6R1-25MLDX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

25V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10.7nC

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Superfast switching with soft recovery

Qualified to 175 °C

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