Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX
- RS-artikelnummer:
- 219-293
- Tillv. art.nr:
- PSMN1R4-40YSHX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
22,74 kr
(exkl. moms)
28,42 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 500 enhet(er), redo att levereras
Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 22,74 kr |
| 10 - 99 | 20,38 kr |
| 100 - 499 | 18,82 kr |
| 500 - 999 | 17,47 kr |
| 1000 + | 15,57 kr |
*vägledande pris
- RS-artikelnummer:
- 219-293
- Tillv. art.nr:
- PSMN1R4-40YSHX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NextPower-S3 Schottky-Plus | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 96nC | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NextPower-S3 Schottky-Plus | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 96nC | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control and battery protection. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
relaterade länkar
- Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX
- Nexperia NextPower-S3 technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX
- Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK
- Nexperia NextPowerS3 Technology Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN1R4-30YLDX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN015-100YSFX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN012-100YSFX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN1R0-25YLDX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R5-40YSDX