STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

Se alla MOSFETs

Antal (1 rulle med 1000 enheter)*

582 840,00 kr

(exkl. moms)

728 550,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 1 000 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
1000 +582,84 kr582 840,00 kr

*vägledande pris

RS-artikelnummer:
215-219
Tillv. art.nr:
SCT012H90G3AG
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

138nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

625W

Forward Voltage Vf

2.8V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, AEC-Q101

Height

4.8mm

Width

10.4 mm

Length

15.25mm

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

relaterade länkar