STMicroelectronics SCT025H120G3AG SiC N-Channel MOSFET, 55 A, 1200 V, 7-Pin H2PAK-7 SCT025H120G3AG

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RS-artikelnummer:
214-951
Tillv. art.nr:
SCT025H120G3AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

1200 V

Series

SCT025H120G3AG

Package Type

H2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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