STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin IPAK STD3NK60Z-1

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rör med 75 enheter)*

351,00 kr

(exkl. moms)

438,75 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 2 700 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
75 - 6754,68 kr351,00 kr
750 - 14254,446 kr333,45 kr
1500 +4,12 kr309,00 kr

*vägledande pris

RS-artikelnummer:
151-949
Tillv. art.nr:
STD3NK60Z-1
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

600V

Package Type

IPAK

Series

SuperMESH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.6Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

11.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

relaterade länkar