STMicroelectronics SuperMESH Type N-Channel MOSFET, 2 A, 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z

Se alla MOSFETs

Antal (1 rulle med 2500 enheter)*

6 360,00 kr

(exkl. moms)

7 950,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 20 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
2500 +2,544 kr6 360,00 kr

*vägledande pris

RS-artikelnummer:
151-934
Tillv. art.nr:
STD2HNK60Z
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.8Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.1mm

Height

2.4mm

Width

6.6 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

relaterade länkar