STMicroelectronics MDmesh M9 Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247 STWA65N045M9

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3 716,37 kr

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4 645,47 kr

(inkl. moms)

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RS-artikelnummer:
151-781
Tillv. art.nr:
STWA65N045M9
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

MDmesh M9

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

312W

Typical Gate Charge Qg @ Vgs

8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

15.90 mm

Length

20.10mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET, I t is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency

Higher VDSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

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