STMicroelectronics SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- RS-artikelnummer:
- 151-440
- Tillv. art.nr:
- STD4NK60ZT4
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 längd med 20 enheter)*
92,06 kr
(exkl. moms)
115,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 4 960 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 20 - 180 | 4,603 kr | 92,06 kr |
| 200 - 480 | 4,368 kr | 87,36 kr |
| 500 - 980 | 4,055 kr | 81,10 kr |
| 1000 - 1980 | 3,73 kr | 74,60 kr |
| 2000 + | 3,59 kr | 71,80 kr |
*vägledande pris
- RS-artikelnummer:
- 151-440
- Tillv. art.nr:
- STD4NK60ZT4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Length | 10.34mm | |
| Standards/Approvals | RoHS | |
| Width | 6.73 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Length 10.34mm | ||
Standards/Approvals RoHS | ||
Width 6.73 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
relaterade länkar
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- STMicroelectronics MDmesh 4 A 3-Pin DPAK STD4NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel SuperMESH Power MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics SuperMESH Type N-Channel SuperMESH Power MOSFET 600 V Enhancement, 3-Pin TO-263 STB4NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel Zener-Protected SuperMESH MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics SuperMESH Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4