STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-220FP STF6N95K5
- RS-artikelnummer:
- 151-419
- Tillv. art.nr:
- STF6N95K5
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
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825,10 kr
(exkl. moms)
1 031,40 kr
(inkl. moms)
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 450 | 16,502 kr | 825,10 kr |
| 500 + | 15,678 kr | 783,90 kr |
*vägledande pris
- RS-artikelnummer:
- 151-419
- Tillv. art.nr:
- STF6N95K5
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | MDmesh K5 | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.25Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series MDmesh K5 | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.25Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
Industrys lowest RDS(on) x area
Industrys best FoM
Ultra low gate charge
100% avalanche tested
Zener protected
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