Infineon XMC7200D-F176K8384AA, 32 bit ARM Cortex M7, XMC7200 Microcontroller, 350 MHz, 1024kB SRAM, 176-Pin TQFP

RS-artikelnummer:: 260-1111
Tillv. art.nr:: XMC7200D-F176K8384AA
Tillverkare / varumärke:: Infineon

Infineon XMC7200D-F176K8384AA, 32 bit ARM Cortex M7, XMC7200 Microcontroller, 350 MHz, 1024kB SRAM, 176-Pin TQFP

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RS-artikelnummer:: 260-1111
Tillv. art.nr:: XMC7200D-F176K8384AA
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Family Name	XMC7200
	Package Type	TQFP
	Mounting Type	Surface Mount
	Pin Count	176
	Device Core	ARM Cortex M7
	Data Bus Width	32bit
	Program Memory Size	1024 KB
	Maximum Frequency	350MHz
	RAM Size	32 kB
	Number of SPI Channels	10
	Number of I2C Channels	10
	Number of UART Channels	1
	Typical Operating Supply Voltage	2.7 → 5.5 V
	Height	1.5mm
	Dimensions	24 x 24 x 1.5mm
	Width	24mm
	Data Rate	10Mbps
	Program Memory Type	SRAM
	ADCs	96 x 12 bit
	Length	24mm
	Maximum Operating Temperature	+125 °C
	Instruction Set Architecture	RISC
	Maximum Number of Ethernet Channels	2
	Minimum Operating Temperature	-40 °C

	Välj alla
	Brand Infineon
	Family Name XMC7200
	Package Type TQFP
	Mounting Type Surface Mount
	Pin Count 176
	Device Core ARM Cortex M7
	Data Bus Width 32bit
	Program Memory Size 1024 KB
	Maximum Frequency 350MHz
	RAM Size 32 kB
	Number of SPI Channels 10
	Number of I2C Channels 10
	Number of UART Channels 1
	Typical Operating Supply Voltage 2.7 → 5.5 V
	Height 1.5mm
	Dimensions 24 x 24 x 1.5mm
	Width 24mm
	Data Rate 10Mbps
	Program Memory Type SRAM
	ADCs 96 x 12 bit
	Length 24mm
	Maximum Operating Temperature +125 °C
	Instruction Set Architecture RISC
	Maximum Number of Ethernet Channels 2
	Minimum Operating Temperature -40 °C

Infineon Microcontroller, 1024 KB Program Memory size, 350 MHz Maximum Frequency - XMC7200D-F176K8384AA

This high-performance MOSFET from Infineon is designed for use in various power management applications. Featuring a TO-220 package, it provides robust performance with a maximum continuous drain current of 50A and a maximum drain-source voltage of 30V. With a low on-resistance and high power dissipation capability, this MOSFET ensures optimal efficiency in demanding electrical systems.

Features & Benefits

• Low drain-source resistance (7.8 mΩ) reduces power loss and enhances operational efficiency

• Maximum power dissipation of 68W ensures reliable operation under high-load conditions

• Wide gate threshold voltage range (1V to 2.2V) offers flexible control for different voltage levels

• High thermal stability with a maximum operating temperature of +175°C

• Enhancement-mode design for efficient switching and precise control of current flow

• Robust gate-source voltage tolerance (-20V to +20V) ensures protection against overvoltage

• Single-transistor configuration ideal for space-constrained designs

Applications

• Suitable for DC/DC converters and power supply

• Used in synchronous rectification for improved converter efficiency

• Ideal for motor control in industrial automation systems

• Employed in battery management systems for electric vehicles

• Applicable in renewable energy systems and consumer electronics

What is the advantage of the low drain-source resistance (RDS(on))?

The low RDS(on) minimises conduction losses and heat generation, improving the overall efficiency of power management systems and ensuring more energy is converted into useful work rather than being lost as heat.

How does the MOSFET handle high power dissipation?

With a maximum power dissipation rating of 68W, the device is designed to manage significant heat during operation, maintaining stability even in demanding conditions.

What is the significance of the gate threshold voltage range?

The wide gate threshold voltage range (1V to 2.2V) provides flexibility in circuit design, allowing the MOSFET to operate efficiently with various control voltages, making it suitable for different applications requiring precise voltage management.