Infineon, 32bit ARM Cortex M7, XMC7200 Microcontroller, 350MHz, 1024 KB SRAM, 176-Pin TQFP

This high-performance MOSFET from Infineon is designed for use in various power management applications. Featuring a TO-220 package, it provides robust performance with a maximum continuous drain current of 50A and a maximum drain-source voltage of 30V. With a low on-resistance and high power dissipation capability, this MOSFET ensures optimal efficiency in demanding electrical systems.

• Low drain-source resistance (7.8 mΩ) reduces power loss and enhances operational efficiency
• Maximum power dissipation of 68W ensures reliable operation under high-load conditions
• Wide gate threshold voltage range (1V to 2.2V) offers flexible control for different voltage levels
• High thermal stability with a maximum operating temperature of +175°C
• Enhancement-mode design for efficient switching and precise control of current flow
• Robust gate-source voltage tolerance (-20V to +20V) ensures protection against overvoltage
• Single-transistor configuration ideal for space-constrained designs

• Suitable for DC/DC converters and power supply
• Used in synchronous rectification for improved converter efficiency
• Ideal for motor control in industrial automation systems
• Employed in battery management systems for electric vehicles
• Applicable in renewable energy systems and consumer electronics

The low RDS(on) minimises conduction losses and heat generation, improving the overall efficiency of power management systems and ensuring more energy is converted into useful work rather than being lost as heat.

With a maximum power dissipation rating of 68W, the device is designed to manage significant heat during operation, maintaining stability even in demanding conditions.

The wide gate threshold voltage range (1V to 2.2V) provides flexibility in circuit design, allowing the MOSFET to operate efficiently with various control voltages, making it suitable for different applications requiring precise voltage management.