Renesas NE3510M04-A N-Channel JFET, 4 V, Idss 42 → 97mA, 4-Pin MO4
- RS-artikelnummer:
- 772-5911P
- Tillv. art.nr:
- NE3510M04-A
- Tillverkare / varumärke:
- Renesas Electronics
Mängdrabatt möjlig
Antal 40 enheter (levereras i ett rör)*
342,56 kr
(exkl. moms)
428,20 kr
(inkl. moms)
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet |
|---|---|
| 40 - 190 | 8,564 kr |
| 200 - 490 | 7,631 kr |
| 500 - 990 | 6,638 kr |
| 1000 + | 6,212 kr |
*vägledande pris
- RS-artikelnummer:
- 772-5911P
- Tillv. art.nr:
- NE3510M04-A
- Tillverkare / varumärke:
- Renesas Electronics
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
- COO (Country of Origin):
- JP
N-Channel HEMT, Renesas
A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.