NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
- RS-artikelnummer:
- 626-3308P
- Tillv. art.nr:
- PMBFJ308,215
- Tillverkare / varumärke:
- NXP
Lagerinformation är för närvarande otillgänglig
- RS-artikelnummer:
- 626-3308P
- Tillv. art.nr:
- PMBFJ308,215
- Tillverkare / varumärke:
- NXP
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | NXP | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 12 to 60mA | |
| Maximum Drain Source Voltage | 25 V | |
| Maximum Gate Source Voltage | -25 V | |
| Maximum Drain Gate Voltage | -25V | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Maximum Drain Source Resistance | 50 Ω | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-23 (TO-236AB) | |
| Pin Count | 3 | |
| Dimensions | 3 x 1.4 x 1mm | |
| Width | 1.4mm | |
| Length | 3mm | |
| Height | 1mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -65 °C | |
| Välj alla | ||
|---|---|---|
Brand NXP | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 12 to 60mA | ||
Maximum Drain Source Voltage 25 V | ||
Maximum Gate Source Voltage -25 V | ||
Maximum Drain Gate Voltage -25V | ||
Transistor Configuration Single | ||
Configuration Single | ||
Maximum Drain Source Resistance 50 Ω | ||
Mounting Type Surface Mount | ||
Package Type SOT-23 (TO-236AB) | ||
Pin Count 3 | ||
Dimensions 3 x 1.4 x 1mm | ||
Width 1.4mm | ||
Length 3mm | ||
Height 1mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -65 °C | ||
- COO (Country of Origin):
- CN
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.