Toshiba GT50J342,Q(O IGBT, 80 A 600 V, 3-Pin TO-3P, Through Hole

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RS-artikelnummer:
891-2740
Tillv. art.nr:
GT50J342,Q(O
Tillverkare / varumärke:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

394 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

0.38µs

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

175 °C

Energy Rating

1.7mJ

Gate Capacitance

4800pF

COO (Country of Origin):
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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