onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
- RS-artikelnummer:
- 864-8821
- Tillv. art.nr:
- FGD3N60LSDTM
- Tillverkare / varumärke:
- ON Semiconductor
Denna produkt har utgått
- RS-artikelnummer:
- 864-8821
- Tillv. art.nr:
- FGD3N60LSDTM
- Tillverkare / varumärke:
- ON Semiconductor
Lagstiftning och ursprungsland
Produktdetaljer
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 6 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 40 W |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 6.73 x 6.22 x 2.39mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 864-8821
- Tillv. art.nr:
- FGD3N60LSDTM
- Tillverkare / varumärke:
- ON Semiconductor