onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
- RS-artikelnummer:
- 864-8821
- Tillv. art.nr:
- FGD3N60LSDTM
- Tillverkare / varumärke:
- ON Semiconductor
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- RS-artikelnummer:
- 864-8821
- Tillv. art.nr:
- FGD3N60LSDTM
- Tillverkare / varumärke:
- ON Semiconductor
Specifikationer
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Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ON Semiconductor | |
| Maximum Continuous Collector Current | 6 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 40 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.73 x 6.22 x 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Välj alla | ||
|---|---|---|
Brand ON Semiconductor | ||
Maximum Continuous Collector Current 6 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 40 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.73 x 6.22 x 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.