Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS-artikelnummer:
- 862-9353
- Tillv. art.nr:
- ISL9V3040S3ST
- Tillverkare / varumärke:
- Fairchild Semiconductor
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160,61 kr
(exkl. moms)
200,76 kr
(inkl. moms)
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- Dessutom levereras 10 enhet(er) från den 29 december 2025
- Dessutom levereras 45 enhet(er) från den 29 december 2025
- Dessutom levereras 560 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 32,122 kr | 160,61 kr |
| 10 - 95 | 27,462 kr | 137,31 kr |
| 100 - 245 | 21,324 kr | 106,62 kr |
| 250 - 495 | 20,564 kr | 102,82 kr |
| 500 + | 18,906 kr | 94,53 kr |
*vägledande pris
- RS-artikelnummer:
- 862-9353
- Tillv. art.nr:
- ISL9V3040S3ST
- Tillverkare / varumärke:
- Fairchild Semiconductor
Specifikationer
Datablad
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Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Maximum Continuous Collector Current | 21 A | |
| Maximum Collector Emitter Voltage | 450 V | |
| Maximum Gate Emitter Voltage | ±14V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 9.65 x 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Välj alla | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Maximum Continuous Collector Current 21 A | ||
Maximum Collector Emitter Voltage 450 V | ||
Maximum Gate Emitter Voltage ±14V | ||
Maximum Power Dissipation 150 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.67 x 9.65 x 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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