Infineon IGW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

RS-artikelnummer:: 857-8560
Tillv. art.nr:: IGW20N60H3FKSA1
Tillverkare / varumärke:: Infineon

Infineon IGW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Mängdrabatt möjlig

Antal (1 rör med 240 enheter)*

3 890,40 kr

(exkl. moms)

4 862,40 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per Rør*
240 - 960	16,21 kr	3 890,40 kr
1200 - 2160	14,065 kr	3 375,60 kr
2400 +	13,713 kr	3 291,12 kr

*vägledande pris

RS-artikelnummer:: 857-8560
Tillv. art.nr:: IGW20N60H3FKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	170 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	16.13 x 5.21 x 21.1mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C

	Välj alla
	Brand Infineon
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 170 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 16.13 x 5.21 x 21.1mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IGW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Infineon TrenchStop IGBT Transistors, 600 and 650V

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