onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- RS-artikelnummer:
- 807-8758
- Tillv. art.nr:
- ISL9V3040D3ST
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
157,14 kr
(exkl. moms)
196,425 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 31,428 kr | 157,14 kr |
| 50 - 95 | 27,104 kr | 135,52 kr |
| 100 - 495 | 23,498 kr | 117,49 kr |
| 500 - 995 | 20,652 kr | 103,26 kr |
| 1000 + | 18,794 kr | 93,97 kr |
*vägledande pris
- RS-artikelnummer:
- 807-8758
- Tillv. art.nr:
- ISL9V3040D3ST
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 21 A | |
| Maximum Collector Emitter Voltage | 300 V | |
| Maximum Gate Emitter Voltage | ±10V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 6.73 x 6.22 x 2.39mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 21 A | ||
Maximum Collector Emitter Voltage 300 V | ||
Maximum Gate Emitter Voltage ±10V | ||
Maximum Power Dissipation 150 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 6.73 x 6.22 x 2.39mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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