IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 192-988
- Tillv. art.nr:
- IXGH40N120B2D1
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
196,46 kr
(exkl. moms)
245,58 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 37 enhet(er) är redo att levereras
- Dessutom levereras 50 enhet(er) från den 16 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 4 | 196,46 kr |
| 5 - 19 | 169,12 kr |
| 20 - 49 | 161,84 kr |
| 50 - 99 | 141,01 kr |
| 100 + | 137,65 kr |
*vägledande pris
- RS-artikelnummer:
- 192-988
- Tillv. art.nr:
- IXGH40N120B2D1
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
relaterade länkar
- IXYS IXGH40N120B2D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH30N120C3 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH40N120C3 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH82N120C3 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH40N120C3D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXA12IF1200HB IGBT 3-Pin TO-247, Through Hole
- IXYS IXGH30N120B3D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH30N120C3D1 IGBT 3-Pin TO-247, Through Hole