Infineon IKW40N120H3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

RS-artikelnummer:: 752-8347
Tillv. art.nr:: IKW40N120H3FKSA1
Tillverkare / varumärke:: Infineon

Infineon IKW40N120H3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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Restorder ej möjlig på grund av bristande allokering. Den evt. angivna systemtekniska leveranstiden är inte giltig.

Pris (ex. moms) Varje

42,96 kr

(exkl. moms)

53,70 kr

(inkl. moms)

Enheter	Per unit
1 +	42,96 kr

RS-artikelnummer:: 752-8347
Tillv. art.nr:: IKW40N120H3FKSA1
Tillverkare / varumärke:: Infineon

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	483 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.03 x 5.16 x 21.1mm
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+175 °C

RS-artikelnummer:: 752-8347
Tillv. art.nr:: IKW40N120H3FKSA1
Tillverkare / varumärke:: Infineon