- RS-artikelnummer:
- 747-1099
- Tillv. art.nr:
- 2MBi300VH-120-50
- Tillverkare / varumärke:
- Fuji
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- RS-artikelnummer:
- 747-1099
- Tillv. art.nr:
- 2MBi300VH-120-50
- Tillverkare / varumärke:
- Fuji
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 360 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1.6 kW |
Package Type | M276 |
Configuration | Series |
Mounting Type | Screw Mount |
Channel Type | N |
Pin Count | 7 |
Dimensions | 108 x 62 x 30.5mm |
Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 747-1099
- Tillv. art.nr:
- 2MBi300VH-120-50
- Tillverkare / varumärke:
- Fuji