Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V

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RS-artikelnummer:
244-5819
Tillv. art.nr:
FD150R12RT4HOSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

790 W

The infineon IGBT modules with fast trench/fieldstop IGBT4 and emitter controlled 4 diode are the right choice for your design it is suitable for typical applications like high frequency switching applications motor drives, UPS systems.

Electrical features
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing

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