Infineon IPA Type N-Channel MOSFET, 66 A, 650 V N TO-220

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

1 149,90 kr

(exkl. moms)

1 437,40 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 01 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
50 - 5022,998 kr1 149,90 kr
100 - 20019,089 kr954,45 kr
250 - 45017,709 kr885,45 kr
500 - 95017,02 kr851,00 kr
1000 +16,33 kr816,50 kr

*vägledande pris

RS-artikelnummer:
258-3779
Tillv. art.nr:
IPAN60R125PFD7SXKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

IPA

Mount Type

Surface

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The MOSFET in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

relaterade länkar