Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- RS-artikelnummer:
- 259-1533
- Tillv. art.nr:
- IKW50N65F5FKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
86,42 kr
(exkl. moms)
108,02 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 36 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 43,21 kr | 86,42 kr |
| 10 - 18 | 38,025 kr | 76,05 kr |
| 20 - 48 | 35,95 kr | 71,90 kr |
| 50 - 98 | 33,315 kr | 66,63 kr |
| 100 + | 30,635 kr | 61,27 kr |
*vägledande pris
- RS-artikelnummer:
- 259-1533
- Tillv. art.nr:
- IKW50N65F5FKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | PG-TO247-3 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type PG-TO247-3 | ||
The Infineon high speed hard-switching IGBT is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.
650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
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