Infineon FP50R12N2T7BPSA1 3 Phase IGBT, 50 A 1200 V, 23-Pin Module, Chassis Mount
- RS-artikelnummer:
- 232-6715
- Tillv. art.nr:
- FP50R12N2T7BPSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
1 246,70 kr
(exkl. moms)
1 558,38 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 1 | 1 246,70 kr |
| 2 - 4 | 1 184,29 kr |
| 5 - 9 | 1 134,45 kr |
| 10 - 19 | 1 084,61 kr |
| 20 + | 1 034,66 kr |
*vägledande pris
- RS-artikelnummer:
- 232-6715
- Tillv. art.nr:
- FP50R12N2T7BPSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 7 | |
| Configuration | 3 Phase | |
| Package Type | Module | |
| Mounting Type | Chassis Mount | |
| Channel Type | N | |
| Pin Count | 23 | |
| Transistor Configuration | 3 Phase | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 7 | ||
Configuration 3 Phase | ||
Package Type Module | ||
Mounting Type Chassis Mount | ||
Channel Type N | ||
Pin Count 23 | ||
Transistor Configuration 3 Phase | ||
The Infineon's EconoPIM 2, 50 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Also available with PressFIT technology. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
Copper base plate for optimized heat spread
High power density
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