onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

Se alla IGBTs

Antal (1 förpackning med 3 enheter)*

31,581 kr

(exkl. moms)

39,477 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 732 enhet(er), redo att levereras
Enheter
Per enhet
Per förpackning*
3 +10,527 kr31,58 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
185-8956
Tillv. art.nr:
FGAF40S65AQ
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

94 W

Number of Transistors

1

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.7 x 5.7 x 24.7mm

Energy Rating

325mJ

Maximum Operating Temperature

+175 °C

Gate Capacitance

2590pF

Minimum Operating Temperature

-55 °C

Uppfyller ej RoHS

COO (Country of Origin):
KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.

Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application

relaterade länkar