Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole
- RS-artikelnummer:
- 170-2258
- Tillv. art.nr:
- IKP20N60TXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
1 097,30 kr
(exkl. moms)
1 371,60 kr
(inkl. moms)
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 21,946 kr | 1 097,30 kr |
| 100 - 200 | 19,752 kr | 987,60 kr |
| 250 + | 18,655 kr | 932,75 kr |
*vägledande pris
- RS-artikelnummer:
- 170-2258
- Tillv. art.nr:
- IKP20N60TXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 41 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 166 W | |
| Number of Transistors | 1 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.36 x 4.57 x 15.95mm | |
| Minimum Operating Temperature | -40 °C | |
| Energy Rating | 0.77mJ | |
| Maximum Operating Temperature | +175 °C | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 41 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 166 W | ||
Number of Transistors 1 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.36 x 4.57 x 15.95mm | ||
Minimum Operating Temperature -40 °C | ||
Energy Rating 0.77mJ | ||
Maximum Operating Temperature +175 °C | ||
Infineon IGBT
The Infineon IGBT is a 3-pin N-channel TO-220 through-hole mount transistor. It has a current rating of 41A and a voltage rating of 600V 3rd generation reverse conducting IGBT optimized for lower switching and conduction losses. Its soft switching behaviour allows for better performance and EMI behaviour. With the help of this transistor excellent performance can be achieved at lower costs.
Features and Benefits
• Cost efficient
• High efficiency
• Low EMI emissions
• Low switching losses
• Lowest V ce (sat) drop for lower conduction losses
• Maximum power dissipation is 166W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• Very soft, fast recovery anti-parallel emitter controlled diode
• High efficiency
• Low EMI emissions
• Low switching losses
• Lowest V ce (sat) drop for lower conduction losses
• Maximum power dissipation is 166W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• Very soft, fast recovery anti-parallel emitter controlled diode
Applications
• Home appliances
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007
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