Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

RS-artikelnummer:: 170-2258
Tillv. art.nr:: IKP20N60TXKSA1
Tillverkare / varumärke:: Infineon

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

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Antal (1 rör med 50 enheter)*

1 097,30 kr

(exkl. moms)

1 371,60 kr

(inkl. moms)

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Dessutom levereras 2 450 enhet(er) från den 16 januari 2026

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Enheter	Per enhet	Per Rør*
50 - 50	21,946 kr	1 097,30 kr
100 - 200	19,752 kr	987,60 kr
250 +	18,655 kr	932,75 kr

*vägledande pris

RS-artikelnummer:: 170-2258
Tillv. art.nr:: IKP20N60TXKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Maximum Continuous Collector Current	41 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	166 W
	Number of Transistors	1
	Package Type	TO-220
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	10.36 x 4.57 x 15.95mm
	Maximum Operating Temperature	+175 °C
	Energy Rating	0.77mJ
	Minimum Operating Temperature	-40 °C

	Välj alla
	Brand Infineon
	Maximum Continuous Collector Current 41 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 166 W
	Number of Transistors 1
	Package Type TO-220
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 10.36 x 4.57 x 15.95mm
	Maximum Operating Temperature +175 °C
	Energy Rating 0.77mJ
	Minimum Operating Temperature -40 °C

Infineon IGBT

The Infineon IGBT is a 3-pin N-channel TO-220 through-hole mount transistor. It has a current rating of 41A and a voltage rating of 600V 3rd generation reverse conducting IGBT optimized for lower switching and conduction losses. Its soft switching behaviour allows for better performance and EMI behaviour. With the help of this transistor excellent performance can be achieved at lower costs.

Features and Benefits

• Cost efficient
• High efficiency
• Low EMI emissions
• Low switching losses
• Lowest V ce (sat) drop for lower conduction losses
• Maximum power dissipation is 166W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• Very soft, fast recovery anti-parallel emitter controlled diode

Applications

• Home appliances
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007