Infineon FS25R12W1T4B11BOMA1 Common Collector IGBT Module, 45 A 1200 V, 22-Pin EASY1B, PCB Mount

Se alla IGBTs
Mängdrabatt möjlig

Antal (1 låda med 24 enheter)*

8 848,008 kr

(exkl. moms)

11 060,016 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 04 mars 2027
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Låda*
24 - 24368,667 kr8 848,01 kr
48 +350,233 kr8 405,59 kr

*vägledande pris

RS-artikelnummer:
168-8769
Tillv. art.nr:
FS25R12W1T4B11BOMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

205 W

Package Type

EASY1B

Configuration

Common Collector

Mounting Type

PCB Mount

Channel Type

N

Pin Count

22

Switching Speed

1MHz

Transistor Configuration

3 Phase

Dimensions

48 x 33.8 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

relaterade länkar