Infineon FP20R06W1E3B11BOMA1 Common Collector IGBT Module, 29 A 600 V, 22-Pin EASY1B, PCB Mount

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8 880,192 kr

(exkl. moms)

11 100,24 kr

(inkl. moms)

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24 - 24370,008 kr8 880,19 kr
48 +351,508 kr8 436,19 kr

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RS-artikelnummer:
168-8765
Tillv. art.nr:
FP20R06W1E3B11BOMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

29 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

94 W

Configuration

Common Collector

Package Type

EASY1B

Mounting Type

PCB Mount

Channel Type

N

Pin Count

22

Switching Speed

1MHz

Transistor Configuration

3 Phase

Dimensions

48 x 33.8 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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