STMicroelectronics STGF20H60DF IGBT, 40 A 600 V, 3-Pin TO-220FP, Through Hole

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732,50 kr

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915,50 kr

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50 - 5014,65 kr732,50 kr
100 - 20013,962 kr698,10 kr
250 +13,61 kr680,50 kr

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RS-artikelnummer:
168-7066
Tillv. art.nr:
STGF20H60DF
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 15.75mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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