IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

Se alla IGBTs

Antal (1 rör med 10 enheter)*

4 394,43 kr

(exkl. moms)

5 493,04 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • 10 enhet(er) levereras från den 06 februari 2026
  • Dessutom levereras 20 enhet(er) från den 13 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
10 +439,443 kr4 394,43 kr

*vägledande pris

RS-artikelnummer:
168-4763
Tillv. art.nr:
IXA70I1200NA
Tillverkare / varumärke:
IXYS
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

IXYS

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

350 W

Package Type

SOT-227B

Mounting Type

Surface Mount

Channel Type

N

Pin Count

4

Transistor Configuration

Single

Dimensions

38.23 x 25.25 x 9.6mm

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
US

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

relaterade länkar