IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
- RS-artikelnummer:
- 125-8046
- Tillv. art.nr:
- IXGN320N60A3
- Tillverkare / varumärke:
- IXYS
10 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Varje
393,47 kr
(exkl. moms)
491,84 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 1 | 393,47 kr |
| 2 - 4 | 341,57 kr |
| 5 - 9 | 332,59 kr |
| 10 - 19 | 323,83 kr |
| 20 + | 315,51 kr |
- RS-artikelnummer:
- 125-8046
- Tillv. art.nr:
- IXGN320N60A3
- Tillverkare / varumärke:
- IXYS
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 320 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 735 W |
| Configuration | Single |
| Package Type | SOT-227B |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 4 |
| Switching Speed | 5kHz |
| Transistor Configuration | Common Emitter |
| Dimensions | 38.23 x 25.07 x 9.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
- RS-artikelnummer:
- 125-8046
- Tillv. art.nr:
- IXGN320N60A3
- Tillverkare / varumärke:
- IXYS