IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

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RS-artikelnummer:
168-4585
Tillv. art.nr:
IXXH80N65B4H1
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

430 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

625 W

Number of Transistors

1

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

5 → 30kHz

Transistor Configuration

Single

Dimensions

16.1 x 5.2 x 21.3mm

Energy Rating

5.2mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
PH

IGBT Discretes, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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