IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS-artikelnummer:
- 168-4507
- Tillv. art.nr:
- IXGH32N170
- Tillverkare / varumärke:
- IXYS
270 I lager för avsändande samma dag
Pris (ex. moms) Var (i ett rör med 30)
201,457 kr
(exkl. moms)
251,821 kr
(inkl. moms)
Enheter | Per enhet | Per Tube* |
|---|---|---|
| 30 + | 201,457 kr | 6 043,71 kr |
- RS-artikelnummer:
- 168-4507
- Tillv. art.nr:
- IXGH32N170
- Tillverkare / varumärke:
- IXYS
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 1700 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247AD |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |