Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole
- RS-artikelnummer:
- 145-8585
- Tillv. art.nr:
- IKP06N60TXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
722,60 kr
(exkl. moms)
903,25 kr
(inkl. moms)
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- Dessutom levereras 300 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 14,452 kr | 722,60 kr |
| 100 - 200 | 11,561 kr | 578,05 kr |
| 250 - 450 | 10,839 kr | 541,95 kr |
| 500 - 950 | 10,118 kr | 505,90 kr |
| 1000 + | 9,395 kr | 469,75 kr |
*vägledande pris
- RS-artikelnummer:
- 145-8585
- Tillv. art.nr:
- IKP06N60TXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 6 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 88 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.36 x 4.57 x 15.95mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 0.335mJ | |
| Gate Capacitance | 368pF | |
| Minimum Operating Temperature | -40 °C | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 6 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 88 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.36 x 4.57 x 15.95mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 0.335mJ | ||
Gate Capacitance 368pF | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- MY
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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