Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 110-7153
- Tillv. art.nr:
- IGW15N120H3FKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 4 enheter)*
174,54 kr
(exkl. moms)
218,176 kr
(inkl. moms)
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- Leverans från den 21 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 4 - 16 | 43,635 kr | 174,54 kr |
| 20 - 36 | 41,44 kr | 165,76 kr |
| 40 - 96 | 39,705 kr | 158,82 kr |
| 100 - 196 | 37,913 kr | 151,65 kr |
| 200 + | 35,335 kr | 141,34 kr |
*vägledande pris
- RS-artikelnummer:
- 110-7153
- Tillv. art.nr:
- IGW15N120H3FKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 15 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 217 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 2.5mJ | |
| Minimum Operating Temperature | -40 °C | |
| Gate Capacitance | 875pF | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 15 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 217 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 2.5mJ | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 875pF | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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