STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

This STMicroelectronics device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
6 μs of minimum short circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin