Infineon IRS2308STRPBF MOSFET Gate Driver, 600 mA 8-Pin 600 V, SOIC
- RS-artikelnummer:
- 258-4014
- Tillv. art.nr:
- IRS2308STRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
20,30 kr
(exkl. moms)
25,38 kr
(inkl. moms)
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- 2 480 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 10,15 kr | 20,30 kr |
| 20 - 48 | 8,68 kr | 17,36 kr |
| 50 - 98 | 8,065 kr | 16,13 kr |
| 100 - 198 | 7,56 kr | 15,12 kr |
| 200 + | 7,055 kr | 14,11 kr |
*vägledande pris
- RS-artikelnummer:
- 258-4014
- Tillv. art.nr:
- IRS2308STRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Output Current | 600mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Rise Time | 220ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | IRS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Output Current 600mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Rise Time 220ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series IRS | ||
Automotive Standard No | ||
The Infineon half bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Floating channel designed for bootstrap operation
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs