Renesas Electronics, Half Bridge 2, 2 A 8-Pin 14 V, SOIC
- RS-artikelnummer:
- 256-1547
- Tillv. art.nr:
- HIP2100IBZT7A
- Tillverkare / varumärke:
- Renesas Electronics
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- RS-artikelnummer:
- 256-1547
- Tillv. art.nr:
- HIP2100IBZT7A
- Tillverkare / varumärke:
- Renesas Electronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 2A | |
| Pin Count | 8 | |
| Fall Time | 10ns | |
| Package Type | SOIC | |
| Number of Outputs | 2 | |
| Driver Type | Half Bridge | |
| Rise Time | 10ns | |
| Minimum Supply Voltage | 9V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 14V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Series | HIP2100 | |
| Width | 4 mm | |
| Length | 5mm | |
| Mount Type | Board | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 2A | ||
Pin Count 8 | ||
Fall Time 10ns | ||
Package Type SOIC | ||
Number of Outputs 2 | ||
Driver Type Half Bridge | ||
Rise Time 10ns | ||
Minimum Supply Voltage 9V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 14V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Series HIP2100 | ||
Width 4 mm | ||
Length 5mm | ||
Mount Type Board | ||
Automotive Standard No | ||
The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.
Drives N-channel MOSFET half bridge
Pb-free (RoHS compliant)
Bootstrap supply max voltage to 114VDC
On-chip 1Ω bootstrap diode
Fast propagation times for multi-MHz circuits
Drives 1000pF load with rise and fall times typ of 10ns
CMOS input thresholds for improved noise immunity
Low Power Consumption
Wide Supply Range
Supply Under voltage Protection
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