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Välj alla	Attribut	Värde
	Brand	Renesas Electronics
	Product Type	Gate Driver Module
	Output Current	4A
	Pin Count	10
	Package Type	TDFN
	Fall Time	365ns
	Number of Outputs	2
	Driver Type	Half Bridge
	Rise Time	435ns
	Minimum Supply Voltage	6V
	Maximum Supply Voltage	18V
	Number of Drivers	2
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Height	0.75mm
	Standards/Approvals	No
	Length	3.80mm
	Width	3 mm
	Series	HIP2210
	Mount Type	Surface
	Automotive Standard	No

	Välj alla
	Brand Renesas Electronics
	Product Type Gate Driver Module
	Output Current 4A
	Pin Count 10
	Package Type TDFN
	Fall Time 365ns
	Number of Outputs 2
	Driver Type Half Bridge
	Rise Time 435ns
	Minimum Supply Voltage 6V
	Maximum Supply Voltage 18V
	Number of Drivers 2
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Height 0.75mm
	Standards/Approvals No
	Length 3.80mm
	Width 3 mm
	Series HIP2210
	Mount Type Surface
	Automotive Standard No

Datasheet - HIP2210FRTZ-T7A

The Renesas 100 V, 3 A source, 4 A sink high-frequency half-bridge NMOS FET driver belongs to HIP2210 series. This driver has 10 pin configuration. It features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6 V to 18 V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

115 VDC bootstrap supply maximum voltage supports 100 V on the half-bridge

Fast propagation delay and matching : 15ns typical delay, 2 ns typical matching (HIP2211)

Integrated 0.5 Ω typical bootstrap diode

Wide 6 V to 18 V operating voltage range

VDD and boot Undervoltage Lockout (UVLO)

Renesas Electronics, Half Bridge 2, 4 A 10-Pin 18 V, TDFN

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