Infineon MOSFET Gate Driver 8-Pin 600 V, SOIC
- RS-artikelnummer:
- 226-6156
- Tillv. art.nr:
- IR21531STRPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
23 685,00 kr
(exkl. moms)
29 605,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 20 maj 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 9,474 kr | 23 685,00 kr |
*vägledande pris
- RS-artikelnummer:
- 226-6156
- Tillv. art.nr:
- IR21531STRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 80ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 80ns | |
| Minimum Supply Voltage | 15.6V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Length | 4.98mm | |
| Width | 3.99 mm | |
| Series | IR21531(D)(S) & (PbF) | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 80ns | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 80ns | ||
Minimum Supply Voltage 15.6V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Length 4.98mm | ||
Width 3.99 mm | ||
Series IR21531(D)(S) & (PbF) | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon IR21531S are an improved version of th popular IR2155 and IR2151 gate driver ICs and in corporates a high voltage half bridge gate driver with a front end oscillator similar to the CMOS 555 timer. A shutdown feature has been designed to the Ct pin, so that both gate driver outputs can be disabled using a low voltage control signal. Noise immunity has been improved significantly both by lowering the peak di/dt of the gate driver, and by increasing the undervoltage lockout hyster to 1V.
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Also available LEAD-FREE