Infineon Hög sida, Gate-drivarmodul, 2 A, 16 Ben 20 V, SOIC

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Antal (1 rulle med 1000 enheter)*

13 023,00 kr

(exkl. moms)

16 279,00 kr

(inkl. moms)

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RS-artikelnummer:
258-4004
Tillv. art.nr:
IRS2113STRPBF
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

Gate-drivarmodul

Utström

2A

Antal ben

16

Kapseltyp

SOIC

Falltid

17ns

Typ av drivsteg

Hög sida

Stigtid

25ns

Minsta matningsspänning

10V

Maximal matningsspänning

20V

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

150°C

Serie

IRS

Standarder/godkännanden

RoHS Compliant

Fordonsstandard

Nej

The Infineon high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 V or 600 V.

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

3.3 V logic compatible

Separate logic supply range from 3.3 V to 20 V

Logic and power ground ± 5V offset

CMOS Schmitt-triggered inputs with pull-down

Cycle by cycle edge-triggered shutdown logic

Matched propagation delay for both channels

Outputs in phase with inputs

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