Infineon 4Mbit Parallel FRAM Memory 48-Pin FBGA, FM22LD16-55-BG

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Förpackningsalternativ:
RS-artikelnummer:
194-9054
Tillv. art.nr:
FM22LD16-55-BG
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Memory Size

4Mbit

Organisation

256K x 16 bit

Interface Type

Parallel

Data Bus Width

16bit

Maximum Random Access Time

55ns

Mounting Type

Surface Mount

Package Type

FBGA

Pin Count

48

Dimensions

6 x 8 x 0.93mm

Maximum Operating Supply Voltage

3.6 V

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

2.7 V

Number of Words

256K

Minimum Operating Temperature

-40 °C

Number of Bits per Word

16bit

A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM22LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22LD16 ideal for nonvolatile memory applications requiring frequent or rapid writes. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against an inadvertent access and data corruption under this condition.

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